Laser-induced p-type GaN Activation and Optical Study of InGaN/GaN Multiple Quantum Well Structures
碩士 === 國立臺灣大學 === 光電工程學研究所 === 88 === In this thesis, the research results of two important topics in developing GaN-based optoelectronics devices are reported. The results of laser induced p-type GaN activation are first presented. Irradiation of the second harmonic (532 nm) of a Q-switched laser h...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/18436616936353687574 |