Photoreflectance and photoluminescence characterization of GaAlAs /InGaAs/GaAs high electron mobility transistor structures
碩士 === 國立海洋大學 === 電機工程學系 === 88 === We have characterized the properties of three AlGaAs/InGaAs/GaAs high electron mobility transistor structure with two different well widths fabricated by molecular beam epitaxy on (001) GaAs substrates using photoreflectance (PR) and photoluminescence (...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/30965178176239939614 |