The research of process about GaN LED
碩士 === 國立清華大學 === 電子工程研究所 === 88 === In this dissertation, we use the wafer that was grown by MOCVD. We take the wafer to develop the process of making the GaN LED. During the development, we find that ICP、n-type ohmic contact 、p-type ohmic contact and TCL are the most important process t...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/01670037050016872349 |