| Summary: | 碩士 === 國立清華大學 === 電子工程研究所 === 88 === Abstract
The integration of aluminum and methylsesquioxane(MSQ) are investigated. First, we fabricated MSQ, titanium nitride (TiN) and Al films, then we study thermal stability of these system with various combination of inter metal dielectric multilayer(Al/TiN/MSQ/Si , Al/TiN/PEOXIDE/MSQ/Si and Al/TiN/oxygen treated MSQ/Si). Analysis of chemical structure, chemical bond and resistivity of thin film were carried out by FTIR, XPS and four point probe. C-V and I-V of dielectric multilayer were employed to study the thermal stability. Furthermore, the correlation of multilayer stress and resistance of aluminum line are found.
From the analysis of FTIR, the Si-O network peak of cured MSQ were higher than cage-like. The dielectric constant of MSQ is 2.722 obtained from C-V measurement. From XPS, 150A thin film layer of SiO2-like was formed in the surface of oxygen treated MSQ.
Oxygen treated MSQ shows the best thermal stability among these multilayer, it can remain stable after 425℃annealing process. By applied thermal stress on the Al line with damascene structure, the change in resistance of the line was larger with that of the smaller line width.
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