Study of Metal Gate on Ultra-thin Gate Dielectrics Integrity

• Main Authors: Shi-Ming Chiang, 江世明
• Other Authors: Meng-Chyi Wu
• Format: Others
• Language: zh-TW
• Published: 2000
• Online Access: http://ndltd.ncl.edu.tw/handle/89617426951423543288

碩士 === 國立清華大學 === 電子工程研究所 === 88 === We reported MOS characteristics of TiN metal gate electrode on ultra-thin gate dielectrics and investigated Si3N4 stress with TiN gate, breakdown voltage, gate leakage current and gate sheet resistance, which compared with SiO2. We also found the soft breakdown phenomenon occurred in TiN gate with Si3N4 dielectric and it was reported only in poly gate with oxide previously. These results demonstrate for the first time that TiN used as gate electrode and Si3N4 as gate dielectrics, contrary to those conclusions made previously on poly gate with oxide.