Study of Metal Gate on Ultra-thin Gate Dielectrics Integrity
碩士 === 國立清華大學 === 電子工程研究所 === 88 === We reported MOS characteristics of TiN metal gate electrode on ultra-thin gate dielectrics and investigated Si3N4 stress with TiN gate, breakdown voltage, gate leakage current and gate sheet resistance, which compared with SiO2. We also found the soft...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/89617426951423543288 |