Analysis of Switching Speed Improvement in Insulated Gate Bipolar Transistor (IGBT) By Electron Irradiation

• Main Authors: Wei-Jye Lin, 林偉捷
• Other Authors: Charles Ching-Hsiang Hsu
• Format: Others
• Language: zh-TW
• Published: 2000
• Online Access: http://ndltd.ncl.edu.tw/handle/54388837044773115923

碩士 === 國立清華大學 === 電子工程研究所 === 88 === Electron Irradiation is a technique used to control the Insulated Gate Bipolar Transistor (IGBT) switching performance. It can reduce the minority carrier lifetime and increase the recombination rate of the excess minority carriers by generating the atomic displacement and trap centers in the drift region of the IGBTs. However, electron irradiation induces undesired effects on other parameters, such as forward voltage drop and threshold voltage. In this thesis, we design a series of electron irradiation dosage to optimize the steady states and switching performance of IGBTs considering various design parameters. Then, the model of predicting turn-off time is created by two-dimensional simulator MEDICI and circuit simulator HSPICE. Finally, We have successful fabricated IGBT with 600V breakdown voltage, 10A on-current, 2.49V on-state voltage drop at 10A, and high speed, 365nsec turn-off time.