Analysis of Switching Speed Improvement in Insulated Gate Bipolar Transistor (IGBT) By Electron Irradiation
碩士 === 國立清華大學 === 電子工程研究所 === 88 === Electron Irradiation is a technique used to control the Insulated Gate Bipolar Transistor (IGBT) switching performance. It can reduce the minority carrier lifetime and increase the recombination rate of the excess minority carriers by generating the atomic displ...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/54388837044773115923 |