The Electric Characteristics of Thin Oxynitride Films Prepared by Liquid Phase Deposition and Quality Improvement by Biasing during the Growth

• Main Authors: Shuo-Yen Lin, 林碩彥
• Other Authors: Ming-Kwei Lee
• Format: Others
• Language: en_US
• Published: 2000
• Online Access: http://ndltd.ncl.edu.tw/handle/95202723341951796748

碩士 === 國立中山大學 === 電機工程學系研究所 === 88 === ASTRACT Using an aqueous solution of ammonia hydroxide aqua, hydrosilicofluoric acid and boric acid, an oxynitride film can be deposited. The deposition rate and refractive index increase with the mole concentration of ammonia hydroxide aqua. However, the refractive index decreases as the mole concentration of ammonia hydroxide aqua becomes too high. The leakage current density as a function of mole concentration of ammonia hydroxide aqua was studied. The best experimental condition is found that incorporating ammonia hydroxide aqua of 0.8M will get good results. The SIMS depth profiles shows nitrogen and hydrogen concentration accumulate at SiON/Si interface. A deposition model is proposed and LPD-SiON can be suggested that it is a combination of N-less LPD-SiON film and N-rich accumulated layer at the interface. The best characteristics of LPD-SiON film are in the range of 110Å-thick to 210Å-thick. When the thickness scales down to 110Å, all the properties become poor. Photo-LPD-SiON process is proposed as a reference of Photo-LPD-SiO2. By mercury lamp illumination, the performances of J-E relationship and C-V characteristic become better. Nitrogen atomic concentration can increase by photo-enhancement checked by analysis of SIMS depth profile and FTIR spectrum. A novel technique of LPD process with applying a bias during the growth is proposed and it is called Bias-LPD-SiON. A model of Bias-LPD-SiON deposition mechanism is also proposed. On the negative bias substrate, high nitrogen atomic concentration can be attained. The J-E characteristic at positive bias of 0.1V and negative bias in a range of 0.1V to 1V are better than traditional LPD-SiON film. Then, the deposition rate of positive bias and negative bias LPD-SiON films at 0.1V can reach 32Å/min and 26Å/min, respectively. Therefore, high quality and high deposition rate can be prepared by Bias-LPD-SiON.