Numerical measurements using transient simulation in MOS-C devices

• Main Authors: tzann bor weng, 翁贊博
• Other Authors: 蔡 曜 聰
• Format: Others
• Language: en_US
• Published: 2000
• Online Access: http://ndltd.ncl.edu.tw/handle/39925105011765171715

碩士 === 國立中央大學 === 電機工程研究所 === 88 === This thesis presents an one-dimensional equivalent circuit model for mixed-level device and circuit simulation, and do an analysis for numerical measurements on MOS-C device dc, ac and transient simulation. First, the thesis will introduce the transient simulation of PN diode switching circuit, and then verify the existed series resistance effect to the switching circuit. Moreover, we study and develop SOS (Semiconductor-Oxide-Semiconductor) model to improve the imperfection of the electrode separation model for the analysis of the boundary condition in MIS (Metal-Insulator-Semiconductor) device. In SOS model, we can discuss the numerical simulation technique, charge conservation, and displacement current. In the thesis, we develop the RE (Ramp Excitation) and RSE (Ramp-Sinusoid Excitation) methods for the semiconductor applications, and compare then to CP (Charge Partition), FD (Fourier Decomposition of Transient Excitations), and S3A (Sinusoidal Steady-State Analysis) methods for numerical measurements. Furthermore, we will recommend the RE and RSE methods with the C-V models to analyze the low-frequency and high-frequency characteristics, and investigate the phenomenon in MOS-C device to understand the operated mechanism inside it. Finally, we will propose the model to discuss the nonideal reason of the MOS system, and the C-V curve shift due to bias sweep rate at the quasi-static condition. On the other hand, we simplify two-dimensional into one-dimensional equivalent circuit model to design the floating-gate device model using Fowler-Nordheim tunneling current for the conduction mechanism. The coupling ratio, the threshold voltage characteristics, the program and erase operation can be implemented and analyzed.