Numerical measurements using transient simulation in MOS-C devices
碩士 === 國立中央大學 === 電機工程研究所 === 88 === This thesis presents an one-dimensional equivalent circuit model for mixed-level device and circuit simulation, and do an analysis for numerical measurements on MOS-C device dc, ac and transient simulation. First, the thesis will introduce the transien...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/39925105011765171715 |