Investigation of GaN material process--Ohmic contact on p-GaN and Eximer laser etching of GaN
碩士 === 國立交通大學 === 光電工程所 === 88 === We study the process of GaN material including ohmic contact on p-GaN and Eximer laser etching of GaN. In ohmic contact, alloy consisted of Ni/Pd/Au film deposited on p-type GaN followed by heat treatment in oxygen condition. A good ohmic characteristic and specifi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46621230251878811346 |