Characterizations of Beryllium Implanted Mg-doped GaN
碩士 === 國立交通大學 === 光電工程所 === 88 === Abstract We investigated the characteristics of beryllium implanted Mg-doped p-type GaN. P-type GaN samples were grown on sapphire substrate by metalorganic chemical vapor deposition. These samples were implanted with Be ions for two different...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/09640029689897813640 |