Surface Reaction of Pentakis(ethylmethylamido) tantalum
碩士 === 國立交通大學 === 應用化學系 === 88 === Tantalum nitride is one of viable candidates for copper diffusion barrier materials in copper-based interconnect technology. We have studied the surface reaction of pentakis(ethylmethyl amido) tantalum on Cu(111) surface within an UHV chambe...
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ndltd-TW-088NCTU05000592016-07-08T04:22:40Z http://ndltd.ncl.edu.tw/handle/42228618235181486205 Surface Reaction of Pentakis(ethylmethylamido) tantalum 五甲基乙基胺基鉭在銅(111)的表面化學反應 jelin 王智麟 碩士 國立交通大學 應用化學系 88 Tantalum nitride is one of viable candidates for copper diffusion barrier materials in copper-based interconnect technology. We have studied the surface reaction of pentakis(ethylmethyl amido) tantalum on Cu(111) surface within an UHV chamber using surface sensitive techniques, including TDS, XPS and NEXAFS. Pentakis(ethylmethyl amido) tantalum decomposed thermally to deposit thin films containing Ta, C and N atoms. The composition and chemical states were sensitively dependent on the growth conditions, including deposition and annealing temperatures. Our primary goal was to evaluate how precursor ligands affect C and N incorporation in to TaN films. Possible reaction mechanism will be presented to explain how the precursor decomposed into a mixture of tantalum carbonitride and graphite-like carbons. Hsin-Tien Chiu 裘性天 2000 學位論文 ; thesis 70 zh-TW |
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碩士 === 國立交通大學 === 應用化學系 === 88 === Tantalum nitride is one of viable candidates for copper diffusion barrier materials in copper-based interconnect technology. We have studied the surface reaction of pentakis(ethylmethyl amido) tantalum
on Cu(111) surface within an UHV chamber using surface sensitive techniques, including TDS, XPS and NEXAFS. Pentakis(ethylmethyl amido) tantalum decomposed thermally to deposit thin films containing Ta, C and N atoms. The composition and chemical states were sensitively dependent on the growth conditions, including deposition and annealing temperatures. Our primary goal was to evaluate how precursor ligands affect C and N incorporation in to TaN films. Possible reaction mechanism will be presented to explain how the precursor decomposed into a mixture of tantalum carbonitride and graphite-like carbons.
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Hsin-Tien Chiu |
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Hsin-Tien Chiu jelin 王智麟 |
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jelin 王智麟 |
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jelin 王智麟 Surface Reaction of Pentakis(ethylmethylamido) tantalum |
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jelin |
title |
Surface Reaction of Pentakis(ethylmethylamido) tantalum |
title_short |
Surface Reaction of Pentakis(ethylmethylamido) tantalum |
title_full |
Surface Reaction of Pentakis(ethylmethylamido) tantalum |
title_fullStr |
Surface Reaction of Pentakis(ethylmethylamido) tantalum |
title_full_unstemmed |
Surface Reaction of Pentakis(ethylmethylamido) tantalum |
title_sort |
surface reaction of pentakis(ethylmethylamido) tantalum |
publishDate |
2000 |
url |
http://ndltd.ncl.edu.tw/handle/42228618235181486205 |
work_keys_str_mv |
AT jelin surfacereactionofpentakisethylmethylamidotantalum AT wángzhìlín surfacereactionofpentakisethylmethylamidotantalum AT jelin wǔjiǎjīyǐjīànjītǎnzàitóng111debiǎomiànhuàxuéfǎnyīng AT wángzhìlín wǔjiǎjīyǐjīànjītǎnzàitóng111debiǎomiànhuàxuéfǎnyīng |
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