Chemical Vapor Deposition of Niobium Carbonitride Thin Films from Alkylimidoniobium Complex

碩士 === 國立交通大學 === 應用化學系 === 88 === The imido complexes, Nb(NR)(NEtMe)3 (R = nPr, iPr, tBu), were successfully synthesized from Nb(NR)Py2Cl3 with LiNEtMe. These complexes were characterized by NMR spectroscopy, and mass spectroscopy. Nb(NtBu)(NEtMe)3, tertbutylimidotriethylmethy...

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Main Authors: Chia-Chen Wu, 吳珈臻
Other Authors: Hsin-Tien Chiu
Format: Others
Language:zh-TW
Published: 2000
Online Access:http://ndltd.ncl.edu.tw/handle/17513467692526874786
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spelling ndltd-TW-088NCTU05000262016-07-08T04:22:40Z http://ndltd.ncl.edu.tw/handle/17513467692526874786 Chemical Vapor Deposition of Niobium Carbonitride Thin Films from Alkylimidoniobium Complex 以亞胺基鈮錯合物經化學氣相沉積碳氮化鈮薄膜 Chia-Chen Wu 吳珈臻 碩士 國立交通大學 應用化學系 88 The imido complexes, Nb(NR)(NEtMe)3 (R = nPr, iPr, tBu), were successfully synthesized from Nb(NR)Py2Cl3 with LiNEtMe. These complexes were characterized by NMR spectroscopy, and mass spectroscopy. Nb(NtBu)(NEtMe)3, tertbutylimidotriethylmethylamidoniobium, was used as a single-source precursor to deposit niobium carbonitride thin films on n-type Si(100) by low-pressure chemical vapor deposition between 723~923 K. XRD analysis indicated that the films exhibited polycrystalline structure. SEM and AFM studies indicated that the roughness increased with the increasing temperature of deposition. ESCA showed that binding energy of the Nb3d5/2, N1s, and C1s, were 203.8~204.2eV, 397.2~397.4eV and 282.8~283.0eV, and the composition of films was NbNxCy (x = 0.39~0.74, y = 0.67~1.47). AES studies showed that the surfaces of films were easily oxidized. Finally, we proposed possible reaction mechanisms based on the byproduct gases in identified by NMR, GC-Ms and FTIR. Hsin-Tien Chiu 裘性天 2000 學位論文 ; thesis 75 zh-TW
collection NDLTD
language zh-TW
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sources NDLTD
description 碩士 === 國立交通大學 === 應用化學系 === 88 === The imido complexes, Nb(NR)(NEtMe)3 (R = nPr, iPr, tBu), were successfully synthesized from Nb(NR)Py2Cl3 with LiNEtMe. These complexes were characterized by NMR spectroscopy, and mass spectroscopy. Nb(NtBu)(NEtMe)3, tertbutylimidotriethylmethylamidoniobium, was used as a single-source precursor to deposit niobium carbonitride thin films on n-type Si(100) by low-pressure chemical vapor deposition between 723~923 K. XRD analysis indicated that the films exhibited polycrystalline structure. SEM and AFM studies indicated that the roughness increased with the increasing temperature of deposition. ESCA showed that binding energy of the Nb3d5/2, N1s, and C1s, were 203.8~204.2eV, 397.2~397.4eV and 282.8~283.0eV, and the composition of films was NbNxCy (x = 0.39~0.74, y = 0.67~1.47). AES studies showed that the surfaces of films were easily oxidized. Finally, we proposed possible reaction mechanisms based on the byproduct gases in identified by NMR, GC-Ms and FTIR.
author2 Hsin-Tien Chiu
author_facet Hsin-Tien Chiu
Chia-Chen Wu
吳珈臻
author Chia-Chen Wu
吳珈臻
spellingShingle Chia-Chen Wu
吳珈臻
Chemical Vapor Deposition of Niobium Carbonitride Thin Films from Alkylimidoniobium Complex
author_sort Chia-Chen Wu
title Chemical Vapor Deposition of Niobium Carbonitride Thin Films from Alkylimidoniobium Complex
title_short Chemical Vapor Deposition of Niobium Carbonitride Thin Films from Alkylimidoniobium Complex
title_full Chemical Vapor Deposition of Niobium Carbonitride Thin Films from Alkylimidoniobium Complex
title_fullStr Chemical Vapor Deposition of Niobium Carbonitride Thin Films from Alkylimidoniobium Complex
title_full_unstemmed Chemical Vapor Deposition of Niobium Carbonitride Thin Films from Alkylimidoniobium Complex
title_sort chemical vapor deposition of niobium carbonitride thin films from alkylimidoniobium complex
publishDate 2000
url http://ndltd.ncl.edu.tw/handle/17513467692526874786
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