Dry Etching of AlGaAs and GaN with Inductively Coupled Plasma System and Photoreflectance Spectra of GaN Schottky Junction

碩士 === 國立交通大學 === 電子物理系 === 88 === In the thesis, we studied two topics. One topic is about high density plasma etching. We employed inductively coupled plasma (ICP) system to study etching rate and sidewall profile of AlGaAs and GaN with various conditions, such as the recipe of gases, p...

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Main Authors:	Yueh-Ju Twu, 涂悅朱
Other Authors:	Su-Lin Yang
Format:	Others
Language:	zh-TW
Published:	2000
Online Access:	http://ndltd.ncl.edu.tw/handle/77998318901971272762

id	ndltd-TW-088NCTU0429024
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spelling	ndltd-TW-088NCTU04290242015-10-13T10:59:52Z http://ndltd.ncl.edu.tw/handle/77998318901971272762 Dry Etching of AlGaAs and GaN with Inductively Coupled Plasma System and Photoreflectance Spectra of GaN Schottky Junction 電感耦合電漿系統對AlGaAs及GaN材料的蝕刻與GaN蕭特基接面之光調制反射光譜的研究 Yueh-Ju Twu 涂悅朱碩士國立交通大學電子物理系 88 In the thesis, we studied two topics. One topic is about high density plasma etching. We employed inductively coupled plasma (ICP) system to study etching rate and sidewall profile of AlGaAs and GaN with various conditions, such as the recipe of gases, pressure, and dc bias. We obtained a higher etching rate with the higher composition of Cl2 gas in high pressure condition. But we could not achieve the best anisotropic profile in this case. The other topic is about the photoreflectance (PR) analysis of the Schottky junction. We analyzed the energy level transitions and the Franz-Keldysh oscillation (FKO) of Ni/GaN and Pd/GaN Schottky junctions with PR technique. The Schottky junctions were fabricated by thermal evaporation with substrate temperature of 77K and 300K. The Schottky junctions with low-temperature fabrication processes revealed the higher Schottky barrier height. Su-Lin Yang 楊賜麟 2000 學位論文 ; thesis 81 zh-TW
collection	NDLTD
language	zh-TW
format	Others
sources	NDLTD
description	碩士 === 國立交通大學 === 電子物理系 === 88 === In the thesis, we studied two topics. One topic is about high density plasma etching. We employed inductively coupled plasma (ICP) system to study etching rate and sidewall profile of AlGaAs and GaN with various conditions, such as the recipe of gases, pressure, and dc bias. We obtained a higher etching rate with the higher composition of Cl2 gas in high pressure condition. But we could not achieve the best anisotropic profile in this case. The other topic is about the photoreflectance (PR) analysis of the Schottky junction. We analyzed the energy level transitions and the Franz-Keldysh oscillation (FKO) of Ni/GaN and Pd/GaN Schottky junctions with PR technique. The Schottky junctions were fabricated by thermal evaporation with substrate temperature of 77K and 300K. The Schottky junctions with low-temperature fabrication processes revealed the higher Schottky barrier height.
author2	Su-Lin Yang
author_facet	Su-Lin Yang Yueh-Ju Twu 涂悅朱
author	Yueh-Ju Twu 涂悅朱
spellingShingle	Yueh-Ju Twu 涂悅朱 Dry Etching of AlGaAs and GaN with Inductively Coupled Plasma System and Photoreflectance Spectra of GaN Schottky Junction
author_sort	Yueh-Ju Twu
title	Dry Etching of AlGaAs and GaN with Inductively Coupled Plasma System and Photoreflectance Spectra of GaN Schottky Junction
title_short	Dry Etching of AlGaAs and GaN with Inductively Coupled Plasma System and Photoreflectance Spectra of GaN Schottky Junction
title_full	Dry Etching of AlGaAs and GaN with Inductively Coupled Plasma System and Photoreflectance Spectra of GaN Schottky Junction
title_fullStr	Dry Etching of AlGaAs and GaN with Inductively Coupled Plasma System and Photoreflectance Spectra of GaN Schottky Junction
title_full_unstemmed	Dry Etching of AlGaAs and GaN with Inductively Coupled Plasma System and Photoreflectance Spectra of GaN Schottky Junction
title_sort	dry etching of algaas and gan with inductively coupled plasma system and photoreflectance spectra of gan schottky junction
publishDate	2000
url	http://ndltd.ncl.edu.tw/handle/77998318901971272762
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Dry Etching of AlGaAs and GaN with Inductively Coupled Plasma System and Photoreflectance Spectra of GaN Schottky Junction

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