Dry Etching of AlGaAs and GaN with Inductively Coupled Plasma System and Photoreflectance Spectra of GaN Schottky Junction
碩士 === 國立交通大學 === 電子物理系 === 88 === In the thesis, we studied two topics. One topic is about high density plasma etching. We employed inductively coupled plasma (ICP) system to study etching rate and sidewall profile of AlGaAs and GaN with various conditions, such as the recipe of gases, p...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/77998318901971272762 |