The Characteristic Study of Epitaxial Lateral Overgrowth GaN by MOCVD
碩士 === 國立交通大學 === 電子物理系 === 88 === Investigating the epitaxial growth of III-V nitride compound semiconductor is lengthy. The advantages of the III-V nitride compound semiconductor are that the energy gap, lattice and the reflective index are tunable. Furthermore, the III-V nitride compou...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/97763903847441791856 |