Deep Submicron CMOS Reliability Concerns: TDDB and Tunneling Leakage
博士 === 國立交通大學 === 電子工程系 === 88 === This dissertation presents modeling analysis on two reliability concerns of deep submicron CMOS gate dielectrics : time-dependent-dielectric-breakdown (TDDB) and tunneling leakage. First, percolation methods were adopted in modeling...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/60078590233930560322 |