Epitaxial SiGe alloy growth and its applications to device
博士 === 國立交通大學 === 電子工程系 === 88 === We have developed a new approach to form epitaxial SiGe layer. The epitaxial SiGe was formed by the deposition of amorphous Ge layer and subsequent high temperature annealing through the mechanism of solid phase epitaxy. We have found that the existence of native o...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/33532108334737073105 |