| Summary: | 碩士 === 國立交通大學 === 電子工程系 === 88 === Plasma etching is the most popular technology for the modern IC manufacturing. However, plasma etching induced damage has become more and more serious and can not be avoided, in particular for short channel devices. This has been one of the majors issue in reliability. Plasma interaction with the silicon wafer during etching process produces damage. There are two types of damage induced by plasma etching. One is the plasma charging damage and the other one is the plasma edge damage. In the past, these two types of damages are usually studied independently.
In this thesis, we proposed a new mechanism to explain the observed plasma charging damage induced edge damage. The two types of damage are not independent but correlated with each other. The devices with different antenna structures will be used to study the plasma induced edge damage. For a reduced channel length, an enhanced device degradation was observed near drain region. The charge pumping method has been employed to extract the interface states and oxide charge, which can provide accurate information of the plasma induced damage as well as the hot carrier induced damage. Finally, three curing process including gate oxide forming gas, poly-reoxidation ambiances, and controllable over-etch time will be used to study the way to improving the plasma induced damage. It was verified that the proposed methods are very efficient for improving the plasma induced device reliability.
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