Charge Pumping Technique for the Evaluation of Plasma Induced Edge Damage in Shallow S/D Extension
碩士 === 國立交通大學 === 電子工程系 === 88 === Plasma etching is the most popular technology for the modern IC manufacturing. However, plasma etching induced damage has become more and more serious and can not be avoided, in particular for short channel devices. This has been one of the majors issue...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/78257601780115613689 |