Semiconductor Device Simulation Based on Balance Equation Method
碩士 === 國立交通大學 === 電子工程系 === 88 === The balance equation method derived from Boltzmann transport equation is presented. The relaxation rate approximation is accounted to nonparabolic band structure by using Monte Carlo method. The hydrodynamic simulation of submicron ballistic diode is de...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/39635419108346964030 |