Analysis of Bottom Electrode Materials for RT-LPCVD-Ta2O5 Thin Film Capacitors
碩士 === 國立交通大學 === 電子工程系 === 88 === Tantalum oxide (Ta2O5) thin films have been demonstrated to be highly promising storage dielectrics in DRAM applications. Rapid thermal low-pressure chemical vapor deposition (RT-LPCVD) method was employed to grow the thin film in this study. The objecti...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/94074372500806101596 |