A Study of Deep Submicron SOI NMOSFET's

• Main Authors: Sung-Dtr Wu, 吳順得
• Other Authors: C. Y. Chang
• Format: Others
• Language: zh-TW
• Published: 2000
• Online Access: http://ndltd.ncl.edu.tw/handle/02366717928715280506

碩士 === 國立交通大學 === 電子工程系 === 88 === In this thesis, it is found that devices with thinner silicon film show a reduced reverse narrow channel effect as well as reverse short channel effect. The experimental findings can be explained by a decrease of cross-sectional silicon/oxide interface area in the width edge so that the boron segregation into oxide due to silicon interstitials is reduced, leading to a reduced RNCE in SOI devices with thinner silicon film. Furthermore, it is proved that the RSCE, RNCE and degradation rate of GIDL caused by channel hot electron stress (CHES) can be reduced by nitrogen implant. In addition, using H-gate structure significantly reduces the floating body effect because of the existence of two sides substrate contact. As to the effect of radiation on SOI devices, some particular characteristics are found. Contrarily to PDSOI devices, which depict more serious SCE and RNCE after radiation, the irradiated FDSOI devices depict a better SCE and a significant Vth reduction.