A Study of Deep Submicron SOI NMOSFET's

碩士 === 國立交通大學 === 電子工程系 === 88 === In this thesis, it is found that devices with thinner silicon film show a reduced reverse narrow channel effect as well as reverse short channel effect. The experimental findings can be explained by a decrease of cross-sectional silicon/oxide interface a...

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Bibliographic Details
Main Authors: Sung-Dtr Wu, 吳順得
Other Authors: C. Y. Chang
Format: Others
Language:zh-TW
Published: 2000
Online Access:http://ndltd.ncl.edu.tw/handle/02366717928715280506