Thermal Reactions on the H/Ge/Si(100) Surfaces
碩士 === 國立交通大學 === 物理研究所 === 88 === ABSTRACT This thesis investigates the thermal reactions on the H/Ge/Si(100) surfaces by high-resolution core-level photoemission. The thickness of the Ge overlayers on the Si(100) sample are 0, 0.4, 0.8, and 1.2 monolayer (ML). The evolution...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/47038505882935315408 |