Investigations of Passivation and Opto-Electrical Characteristics in GaSb and InAs Based Infrared Photodetector
博士 === 國立成功大學 === 電機工程學系 === 88 === An elemental Sb layer, formed at the oxide/GaSb interface, causes large surface leakage current and recombination, which are two main drawbacks of GaSb-based devices in full photoelectric application. The proportion of elemental Sb to other Sb compounds at the GaS...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/28017836790033956522 |