Temperature Dependent Heterostructure Field-Effect Transistors using InGaP Schottky layer
碩士 === 國立成功大學 === 電機工程學系 === 88 === Abstract In this thesis, we have successfully grown and fabricated InGaP/InGaAs/GaAs and InGaP/InGaAs/AlGaAs heterostructure field-effect transistors by low-pressure metalorganic chemical vapor deposition ( LP-MOCVD ). At first, we...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/31365867037681176868 |