Study of Double Heterojunction Power Pseudomorphic High Electron Mobility Transistor
碩士 === 國立成功大學 === 電機工程學系 === 88 === One way of improving the AlGaAs/GaAs conventional HEMT performance is to use InGaAs as the two-dimensional electron gas channel material instead of GaAs. Because the InGaAs pseudomorphic channel is buried inside the double heterojunction layers, the pro...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/83791465686251673278 |