以射頻磁控濺鍍法製備(Ba0.75Sr0.25)TiO3晶片型陶瓷電容器及其特性之探討

• Main Author: 黃順發
• Other Authors: 吳南均
• Format: Others
• Language: zh-TW
• Published: 2000
• Online Access: http://ndltd.ncl.edu.tw/handle/41168231510140047506

碩士 === 國立成功大學 === 材料科學及工程學系 === 88 === ABSTRACT In this study , both single BST and multilayer (BST/Pt)n thin films deposited onto Pt/Ti/SiO2/Si ( n-type (100) ) substrate from targets in composition of BaTiO3 and SrTiO3 powders mixed and sintered , by R.F. magnetron sputtering method.The thin films are characterized in term of R.F. power、ambient pressure、Ar partial pressure、preheated temperature of substrate , etc. Experimental results show that the deposition rate of thin films increases with increasing R.F. power and Ar partial pressure , and decreasing the ambient pressure.But the R.F. power runs over a critical value and the deposition rate decreasing observely.XRD、SEM and TEM are used to characterize thin films microstructure、grain size and micromorphology.Their show that the single BST thin films are rougher than the multilayer (BST/Pt)n ones.The grain size of former is ~50nm and the latter’s is ~100nm. The dielectric permittivity decreases with increasing the frequency of measurement for both .And under different operating temp.、the dielectric permittivities are nearly constant.The I-V curve show that the leakage current of multilayer is larger than one of single.The broken voltage of former is 34.65V and the latter’s is nearly 32.2V.The C-V curve show that the current capacity of former is 2.53×10-8 and the latter’s is 7.509×10-10. The parameters are controlled effectively and the multilayer (BST/Pt)n thin films can are applied to capacitor components in electrical industy.