Effects of Ni Overlayer and Substrate Temperature on the Lateral Growth of Poly-Si by Pulsed KrFLaser Annealing

碩士 === 國立成功大學 === 材料科學及工程學系 === 88 === Effects of patterned Ni overlayer on the lateral growth of poly-Si were studied by pulsed KrF laser annealing as a function of the energy density and substrate temperature. Upon annealing the patterned Ni overlayer absorbed the laser energy to creat...

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Bibliographic Details
Main Authors: Shun-Te Cheng, 程順德
Other Authors: Wen-Tai Lin
Format: Others
Language:zh-TW
Published: 2000
Online Access:http://ndltd.ncl.edu.tw/handle/20027416484489902164