| Summary: | 碩士 === 華梵大學 === 機電工程研究所 === 88 === The purpose of this study was to investigate the chipping models produced in the cutting edges of dicing Si wafer using the diamond blade. The effects of dicing directions and different wafer types on the chipping size were studied. In addition, Taguchi method was used to analysis the effects of the different dicing parameters on the cutting edge, width and maximum width. Furthermore, the scratching tests were also used to study the chipping conditions of the Si wafer.
The experimental results showed that the steps of model produced by the diamond pyramid in the scratching test of Si wafer can be divided into rubbing, plastic deformation, and cracking. The plastic pile up and crack of the scratching traces will propagate along the development of <110> directions. The chipping models in dicing Si wafer also can be broadly divided into four types: (1) 30°chipping, (2) 60°chipping, (3) 90°chipping, and (4) irregular chipping, which the rate of chipping models were occurred by the different dicing directions and wafer planes. When using the thin diamond blade diced on the (111) Si wafer along the [ 10] direction, the size of top chipping edges was smaller than that of [11 ] direction, and the dicing quality was better. Besides, for the (100) plane of Si wafer, the size and the distribution of the chipping produced along the [ 10] and [ 0] directions were similar. From the analysis of Taguchi method, the wafer types, the depth of cut and the coolant flow rate in dicing process had significantly effects for the maximum dicing width.
Keyword: dicing, Si wafer, chipping, cut quality
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