Fabrication and physical property studies of Al oxidation layer used in spin-dependent tunneling junction
碩士 === 輔仁大學 === 物理學系 === 88 === The in-situ electrical characterization of Al thin films (< 20 nm), which were fabricated by magnetron sputtering system, was performed by AC resistance bridge measurement. Further, we studied variations of electrical properties of oxidized Al thin films...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/38472459268893960157 |