Evaluation of Diffusion Barrier Properties of Homogeneous and Composition-Modulated Tantalum Nitride Thin Films for Copper Metallization
碩士 === 逢甲大學 === 材料科學學系 === 88 === Thin films of 40-nm-thick single-layered Ta2N and TaN and multilayered Ta2N/TaN having bilayer thicknesses (λ) from 4 to 40 nm were sputter deposited at different argon/nitrogen gas pressure ratios on (100) silicon wafers. The properties of the single- and multilaye...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/68319383069610742886 |