A Study of Sputter Deposition and Barrier Properties of Tantalum-Silicon-Nitrogen Thin Films
碩士 === 逢甲大學 === 材料科學學系 === 88 === To fulfill the requirements of low resistance-capacitance (RC) delay, high resistance against electro- and stress-migration for the multilevel integrated circuits (ICs), the Cu/Ta-N metallization system has become the most prominet interconnect for ICs. H...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/41843977978783893340 |