Epitaxial Growth and Characterization of Hexagonal and Cubic Gallium Nitride Grown by Metalorganic Chemical Vapor Deposition
碩士 === 大葉大學 === 電機工程研究所 === 88 === The growth and characteristics of hexagonal and cubic gallium nitride (GaN) grown by metalorganic chemical vapor deposition (MOCVD) were investigated in this study. Optical grade polished (0001) orientation (C-face) sapphires are used as the standard sub...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/89763388837273269727 |