Model of indium diffusion and its application in deep submicron NMOS transistor
碩士 === 長庚大學 === 電機工程研究所 === 88 === In the development of deep-submicron, because of scaling down of device, the process control in channel and junction depth is important. Indium has been used as an alternative channel implant in submicrometer channel Si MOSFET’s, Due to its high atomic m...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/54549927896640166714 |