The nitrogen and fluorine effect on the MOSFETs with N20 gate oxides
碩士 === 長庚大學 === 電機工程研究所 === 88 === For high speed and low cost, it is necessary to shrink the gate length of Metal-Oxide-Silicon Field Effect transistors. But the continuing shrinking of gate length of MOSFET, for a MOSFET, in order to behave as a transistor with good characteristics, the...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/76139358470936713085 |