High Frequency Deep-Submicron CMOS device and circuit modeling
碩士 === 長庚大學 === 電機工程研究所 === 88 === As the gate lengths of silicon MOSFET’s become smaller and smaller, The conventional device model is not accurate in the GHz range. Because BSIM3v3 has been widely accepted as a standard CMOS model for low and medium frequency applications, we must find...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2000
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| Online Access: | http://ndltd.ncl.edu.tw/handle/02579999569987998973 |