| Summary: | 碩士 === 國立臺灣科技大學 === 化學工程系 === 87 === Copper films have been formed by metalorganic chemical vapor deposition (MOCVD) method using Cu-hexafluoracetylacetonate‧vinyltrimethoxysilane (Cu(hfac)‧VTMOS) as the precursor. Emphasis of this study was laid on understanding the reactivity of the precursor by investigating the Cu deposition on various substrate surfaces and ambient gases.
According to a series of deposition experiments on varying substrate surface, the precursor preferred depositing copper films on conductive surface. Cu films with the lowest resistivity (4.5μΩ-cm) was deposited on TiN substrate in Ar ambient at 180℃. Modification the substrate surface with a thin layer of Pt and changing the ambient gas into H2 increased film surface smoothness, and were supposed to decrease the film resistivity.
The role of ambient gas H2, from an investigation of the initial growth stage by EDS, was found to compete with the precursor for surface adsorption which hindered the growth of copper films eventually. Though H2 inhibited the growth rate, selectivity on growth has been relatively raised.
Direct current bias has been applied on the substrate surface to investigate the film growth mechanism of the precursor. It is found both positive and negative biases increased the film growth rate, indicating that a disproportionation reaction between two adsorbed species Cu+1(hfa) occurred during the film growth. Positive bias was not as favorable as negative bias due to the structure obstacle effect of the species.
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