Submicron T-Gate Fabrication and Ion-Implanted Power MESFET's
碩士 === 國立臺灣大學 === 電機工程學研究所 === 87 === Abstract Power performance of 0.8 um ion implanted metal-semiconductor field effect transistors (MESFET) has been proposed. We also have demonstrated its DC and microwave characteristics of these devices. They have a high unity current-gain...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/75361695817277959660 |