A Free Electron Model Study of Magnetoresistance effect in Single and Double Barrier Tunneling Junction
碩士 === 國立臺灣大學 === 物理學研究所 === 87 === Current spin polarization and tunneling magnetoresistance (MR) of single and double magnetic tunneling junctions have been calculated within the free electron model by solving rigorously the 3D Schrodinger equation for different bias voltages...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/58662257621591083079 |