The Fabrication and Characterization of Metal-Ta2O5-Semiconductor Field Effect Transistors
碩士 === 國立清華大學 === 電機工程學系 === 87 === N-channel metal gate metal oxide semiconductor field effect transistors (MOSFET) with Ta2O5 gate oxide are fabricated. The Ta2O5 films are deposited by plasma enhanced chemical vapor deposition system. The Capacitance-Voltage, Drain current-Drain voltag...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46365980333556549832 |