A New Method to Determine Effective Channel Length, Source-and-Drain Series Resistance of MOSFET's and Temperature Effect on Effective Channel Length
碩士 === 國立清華大學 === 電子工程研究所 === 87 === A new method of extracting effective channel length (Leff) and source-and-drain series resistance (RSD) is proposed. The method bases on I-V measurement and drain current equation. Since Leff and RSD were considered to be gate-voltage-dependent, this n...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/92908825740732966641 |