The Electrical Characterization and Reliability Study of Metal-Ta2O5-Silicon Capacitors for Very Large Scale Integrated (VLSI) MOS Gate Oxide Applications
碩士 === 國立清華大學 === 電子工程研究所 === 87 === The C-V characteristics of Au/Ta2O5/p-Si capacitors were studied. The Ta2O5 films were deposited by plasma-enhanced chemical vaporized deposition. Two Ta2O5 thicknesses, 14.4 nm and 9.2 nm were used in this experiment. The oxide charge and interface-trapped charg...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/61404067875519662718 |