Interficial Reactions of Ni Thin Films on Si1-xGex Substrates
碩士 === 國立清華大學 === 材料科學工程學系 === 87 === Interfacial reactions of Ni on epitaxially grown Si1-xGex strained layer have been investigated. Ni thin films ( 300 A ) were evaporated by an electron beam evaporation system on the Si1-xGex substrates at room temperature. The solid-phase...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1999
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/17665967814948490239 |