The fabrication and analysis of GaN light emitting diode
碩士 === 國立中央大學 === 光電科學研究所 === 87 === In this paper, we fabricate GaN LED by using ECR etching technology.And after ECR etching process, we use RTA (Rapid thermal annealing) to recover the lattice quality which is damaged in the ECR etching process and to improve device performance.We find...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/50094743205148948067 |