The study of metal contacts on p-GaN
碩士 === 國立交通大學 === 光電工程所 === 87 === In this dissertation , severial kinds of metal schemes were used to form ohmic contacts on p-GaN. In this work ,ohmic contact to p-type GaN with the lowest contact resistivity of 9.6 × 10－4Ωocm2 was developed by the surface treatmen...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/65029005664540465097 |