Fabrication and Simulation of CrSiN-Based Embedded Material for Embedded Attenuated Phase-Shifting Mask
碩士 === 國立交通大學 === 應用化學系 === 87 === The main purpose of this thesis is to study the Cr-Si-N as a new embedded layer in EAPSM for 193 and 248 nm lithography. The results are as follows: 1. By changing the sputtering conditions, suitable Cr-Si-N embedded layer could be obtained....
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
1999
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| Online Access: | http://ndltd.ncl.edu.tw/handle/09509142069016343094 |